Fig 1OLED stack and pixel circuitDrag gray · E apart · [ ] layer · C circuit · L labels③ emit · sampled 64
On now: a switched-on transistor, an active line, the selected layer. T1 lights only while it carries currentStack layers, exaggerated in thicknessR / G / B emitting patchesA bench jig. Left: a pixel-drive card you can switch between a 7T1C compensation circuit and a plain 2T1C circuit. It draws ONE subpixel's driver: in a real panel the R, G and B subpixels each have their own, here all three patches light from this one only to keep the figure small. Right: one example 17-layer top-emission AMOLED module (not the only or a universal stack). Where the PDL has an opening the organic layers touch the anode, and the anode reaches the TFT drain through a via, the small post in the PLN. The slider sets the PENDING gray: Cst only takes it in the next write phase, so dragging it during emit changes nothing until then. The row of three at the front: neighbouring pixels with |Vth| differing by ±80 mV, same gray.
Model. I = ½k·[max(Vsg − |Vth|, 0)]², with Vsg = Vsource − Vgate (source = ELVDD whenever T5 is on, i.e. in emit and always in 2T1C; during 7T1C write the source is Vdata, and in init it is floating) and overdrive Vov = Vsg − |Vth|. 7T1C: the write phase diode-connects T1 so the gate settles at Vdata − |Vth|, hence Vsg − |Vth| = ELVDD − Vdata and I = ½k(ELVDD − Vdata)². 2T1C: gate = Vdata, so |Vth| stays in the current. Teaching assumptions, not a statement about any real panel: square law, T1 saturated, full settling in the write phase, same ELVDD at write and emit; no channel-length modulation, mobility spread, leakage, IR drop, Cgd kick-back or OLED voltage. Not every 7T1C variant cancels Vth this exactly; the T-numbers and scan-line names here are this figure's own. Layer thickness is exaggerated.